Infineon Technologies IMBG120R078M2HXTMA1
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IMBG120R078M2HXTMA1
1211-IMBG120R078M2HXTMA1
晶体管 - FET,MOSFET - 单个
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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IMBG120R078M2HXTMA1详情
Infineon Technologies IMBG120R078M2HXTMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
供应商器件包装
PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5.1V @ 2.8mA
Power Dissipation (Max)
158W (Tc)
Base Product Number
IMBG120R078
厂商
Infineon Technologies
Current - Continuous Drain (Id) @ 25℃
29A (Tc)
操作温度
-55°C ~ 175°C (TJ)
系列
CoolSiC? Gen 2
包装
Tape & Reel (TR)
零件状态
活跃
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
78.1mOhm @ 8.9A, 18V
输入电容(Ciss)(Max)@Vds
700 pF @ 800 V
门极电荷(Qg)(最大)@Vgs
20.6 nC @ 18 V
漏源电压 (Vdss)
1200 V
Vgs(最大值)
+23V, -10V
IMBG120R078M2HXTMA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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