Infineon Technologies IMBG40R025M2HXTMA1

包装/外壳

TO-263-7

RoHS

符合RoHS标准

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

400 V

Id - Continuous Drain Current

68 A

Rds On - Drain-Source Resistance

36.5 mOhms

Vgs - Gate-Source Voltage

- 10 V, 25 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Qg - Gate Charge

36 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

214 W

Channel Mode

Enhancement

Fall Time

7.9 ns

Moisture Sensitive

有

Factory Pack Quantity

1000

Typical Turn-Off Delay Time

19.9 ns

Typical Turn-On Delay Time

12.5 ns

Part # Aliases

IMBG40R025M2H SP006064661

包装

Reel

类型

G2 MOSFET

配置

Single

通道数量

1 Channel

上升时间

11.9 ns

产品

SiC MOSFETS