Infineon Technologies IMBG40R045M2HXTMA1

包装/外壳

TO-263-7

Part # Aliases

IMBG40R045M2H SP006064680

Typical Turn-On Delay Time

12 ns

Typical Turn-Off Delay Time

17.3 ns

Factory Pack Quantity

1000

Moisture Sensitive

有

Fall Time

8.3 ns

Channel Mode

Enhancement

Pd - Power Dissipation

150 W

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 55 C

Vgs th - Gate-Source Threshold Voltage

4.5 V

Vgs - Gate-Source Voltage

- 10 V, 25 V

Rds On - Drain-Source Resistance

64.5 mOhms

Id - Continuous Drain Current

43 A

Vds - Drain-Source Breakdown Voltage

400 V

Transistor Polarity

N-Channel

Mounting Styles

SMD/SMT

RoHS

符合RoHS标准

包装

Reel

类型

G2 MOSFET

配置

Single

通道数量

1 Channel

上升时间

10.7 ns

产品

SiC MOSFETS