Infineon Technologies IMBG65R048M1HXTMA1

安装类型

表面贴装

引脚数

7

厂商

Infineon Technologies

Product Status

活跃

Number of Elements per Chip

1

Package Type

TO-263-7

MSL

-

Continuous Drain Current Id

45A

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

5.7 V

Pd - Power Dissipation

183 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 23 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IMBG65R048M1H SP005539172

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

33 nC

Rds On - Drain-Source Resistance

64 mOhms

RoHS

Details

Id - Continuous Drain Current

45 A

系列

*

包装

MouseReel

子类别

MOSFETs

技术

SiC

通道数量

1 Channel

功率耗散

183W

产品类别

MOSFET

信道型

N

产品

MOSFET

产品类别

MOSFET