Infineon Technologies IMBG65R050M2HXTMA1
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IMBG65R050M2HXTMA1
1211-IMBG65R050M2HXTMA1
晶体管 - FET,MOSFET - 单个
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
大陆
立即发货

SILICON CARBIDE MOSFET
1最小包装量--
IMBG65R050M2HXTMA1详情
Infineon Technologies IMBG65R050M2HXTMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
安装类型
表面贴装
供应商器件包装
PG-TO263-7-12
Base Product Number
IMBG65R050
Current - Continuous Drain (Id) @ 25℃
41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
5.6V @ 3.7mA
Power Dissipation (Max)
172W (Tc)
厂商
Infineon Technologies
操作温度
-55°C ~ 175°C (TJ)
系列
CoolSiC™ Gen 2
包装
Tape & Reel (TR)
零件状态
活跃
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
62mOhm @ 18.2A, 18V
输入电容(Ciss)(Max)@Vds
790 pF @ 400 V
门极电荷(Qg)(最大)@Vgs
22 nC @ 18 V
漏源电压 (Vdss)
650 V
Vgs(最大值)
+23V, -7V
IMBG65R050M2HXTMA1拓展信息
Infineon Technologies
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Infineon Technologies
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Infineon Technologies
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