Infineon Technologies IPA028N04NM3SXKSA1

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

供应商器件包装

PG-TO220-FP

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

89A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 95μA

Power Dissipation (Max)

38W (Tc)

Continuous Drain Current Id

89

Qualification

-

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

27 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

38 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Part # Aliases

IPA028N04NM3S SP005351627

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

90 nC

Rds On - Drain-Source Resistance

2.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

40 ns

Id - Continuous Drain Current

89 A

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

功率耗散

38

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.8mOhm @ 89A, 10V

输入电容(Ciss)(Max)@Vds

9500 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

120 nC @ 10 V

上升时间

7.8 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET