Infineon Technologies IPA082N10NF2SXKSA1

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

引脚数

3

供应商器件包装

PG-TO220 Full Pack

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.8V @ 46μA

Power Dissipation (Max)

35W (Tc)

Continuous Drain Current Id

46

Qualification

-

Number of Elements per Chip

1

Package Type

TO-220 FP

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

35 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Part # Aliases

IPA082N10NF2S SP005549094

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

42 nC

Rds On - Drain-Source Resistance

8.2 mOhms

Id - Continuous Drain Current

46 A

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

功率耗散

35

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.2mOhm @ 30A, 10V

输入电容(Ciss)(Max)@Vds

2000 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

42 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET