Infineon Technologies IPA95R130PFD7XKSA1

包装/外壳

PG-TO-220FP-3

安装类型

通孔

供应商器件包装

PG-TO220 Full Pack

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

950 V

Id - Continuous Drain Current

13.9 A

Rds On - Drain-Source Resistance

130 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Qg - Gate Charge

141 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

33 W

Channel Mode

Enhancement

Fall Time

3.6 ns

Factory Pack QuantityFactory Pack Quantity

500

Typical Turn-Off Delay Time

118 ns

Typical Turn-On Delay Time

25 ns

Part # Aliases

IPA95R130PFD7 SP005546999

Package

Tube

Current - Continuous Drain (Id) @ 25℃

13.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Power Dissipation (Max)

33W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 1.25mA

操作温度

-55°C ~ 150°C (TJ)

系列

CoolMOS™

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

130mOhm @ 25.1A, 10V

输入电容(Ciss)(Max)@Vds

4170 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

141 nC @ 10 V

上升时间

14 ns

漏源电压 (Vdss)

950 V

Vgs（最大值）

±20V

场效应管特性

-