Infineon Technologies IPA95R450PFD7XKSA1
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IPA95R450PFD7XKSA1
1211-IPA95R450PFD7XKSA1
晶体管 - FET,MOSFET - 单个
PG-TO-220FP-3
大陆
立即发货

MOSFET
--最小包装量--
IPA95R450PFD7XKSA1详情
Infineon Technologies IPA95R450PFD7XKSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
PG-TO-220FP-3
安装类型
通孔
供应商器件包装
PG-TO220-3-313
Part # Aliases
IPA95R450PFD7 SP005547011
Typical Turn-On Delay Time
9 ns
Typical Turn-Off Delay Time
45 ns
Factory Pack QuantityFactory Pack Quantity
500
Fall Time
4.7 ns
Channel Mode
Enhancement
Pd - Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Qg - Gate Charge
43 nC
Vgs th - Gate-Source Threshold Voltage
3.5 V
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Rds On - Drain-Source Resistance
450 mOhms
Id - Continuous Drain Current
7.2 A
Vds - Drain-Source Breakdown Voltage
950 V
Transistor Polarity
N-Channel
Mounting Styles
通孔
Package
Tube
Current - Continuous Drain (Id) @ 25℃
7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
Infineon Technologies
Power Dissipation (Max)
30W (Tc)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.5V @ 360µA
操作温度
-55°C ~ 150°C (TJ)
系列
CoolMOS™
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
450mOhm @ 7.2A, 10V
输入电容(Ciss)(Max)@Vds
1230 pF @ 400 V
门极电荷(Qg)(最大)@Vgs
43 nC @ 10 V
上升时间
8.7 ns
漏源电压 (Vdss)
950 V
Vgs(最大值)
±20V
场效应管特性
-
IPA95R450PFD7XKSA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
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Infineon Technologies
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Infineon Technologies
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