Infineon Technologies IPB016N08NF2SATMA1

包装/外壳

D2PAK-3

厂商

Infineon Technologies

Package

Tape & Reel (TR)

Product Status

活跃

Base Product Number

IPB016N

Factory Pack QuantityFactory Pack Quantity

800

Part # Aliases

IPB016N08NF2S SP005571685

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

300 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

170 nC

Rds On - Drain-Source Resistance

1.65 mOhms

Id - Continuous Drain Current

170 A

系列

*

包装

Reel

子类别

MOSFETs

技术

Si

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET