Infineon Technologies IPB017N06N3GXT

包装/外壳

TO-263-7

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

60 V

Id - Continuous Drain Current

180 A

Rds On - Drain-Source Resistance

1.3 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

275 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

250 W

Channel Mode

Enhancement

Tradename

OptiMOS

Fall Time

24 ns

Forward Transconductance - Min

99 S

Factory Pack QuantityFactory Pack Quantity

1000

Typical Turn-Off Delay Time

79 ns

Typical Turn-On Delay Time

41 ns

Part # Aliases

G IPB017N06N3 SP000434404 IPB017N06N3GATMA1

Unit Weight

0.056438 oz

系列

OptiMOS 3

包装

Reel

类型

OptiMOS 3 Power-Transistor

配置

Single

通道数量

1 Channel

上升时间

80 ns

晶体管类型

1 N-Channel

高度

4.4 mm

长度

10 mm

宽度

9.25 mm