Infineon Technologies IPB051NE8NGATMA1

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3-2

Power Dissipation (Max)

300W (Tc)

厂商

Infineon Technologies

Package

Bulk

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250μA

操作温度

-55°C ~ 175°C (TJ)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

5.1mOhm @ 100A, 10V

输入电容(Ciss)(Max)@Vds

12100 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

180 nC @ 10 V

漏源电压 (Vdss)

85 V

Vgs（最大值）

±20V

场效应管特性

-