Infineon Technologies IPB180P04P403ATMA2

工厂交货时间

16 Weeks

安装类型

表面贴装

包装/外壳

TO-263-7, D2Pak (6 Leads + Tab)

供应商器件包装

PG-TO263-7-3

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

180A (Tc)

Power Dissipation (Max)

150W (Tc)

Base Product Number

IPB180

Continuous Drain Current Id

180

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

48 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

150 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPB180P04P4-03 SP002325764

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

190 nC

Rds On - Drain-Source Resistance

2 mOhms

RoHS

Details

Typical Turn-Off Delay Time

72 ns

Id - Continuous Drain Current

180 A

Package Description

,

Moisture Sensitivity Levels

1

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

IPB180P04P403ATMA2

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

2.22

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

通道数量

1 Channel

功率耗散

150

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

2.8mOhm @ 100A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 410μA

输入电容(Ciss)(Max)@Vds

17640 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

250 nC @ 10 V

上升时间

31 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

信道型

P

场效应管特性

-

产品类别

MOSFET