Infineon Technologies IPB19DP10NMATMA1

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2.9A (Ta), 13.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

3.8W (Ta), 83W (Tc)

Base Product Number

IPB19D

Number of Elements per Chip

1

Package Type

D2PAK (TO-263)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

13.8A

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

83 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPB19DP10NM SP005343867

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

36 nC

Rds On - Drain-Source Resistance

185 mOhms

RoHS

Details

Id - Continuous Drain Current

13.8 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

83W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

185mOhm @ 12A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1.04mA

输入电容(Ciss)(Max)@Vds

2000 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

45 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

P

场效应管特性

-

产品

MOSFET

产品类别

MOSFET