Infineon Technologies IPB45P03P4L11ATMA2

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3-2

厂商

Infineon Technologies

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 85μA

Power Dissipation (Max)

58W (Tc)

Base Product Number

IPB45P

Rad Hardened

无

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

7 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

58 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 16 V, + 5 V

Unit Weight

0.011425 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPB45P03P4L-11 SP002319824

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

42 nC

Rds On - Drain-Source Resistance

13.1 mOhms

RoHS

Details

Typical Turn-Off Delay Time

45 ns

Id - Continuous Drain Current

45 A

操作温度

-55°C ~ 175°C (TJ)

包装

卷带

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

10.8mOhm @ 45A, 10V

输入电容(Ciss)(Max)@Vds

3770 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

55 nC @ 10 V

上升时间

3 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

+5V, -16V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET