Infineon Technologies IPB80P03P405ATMA2

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3-2

厂商

Infineon Technologies

Product Status

最后一次购买

Current - Continuous Drain (Id) @ 25℃

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

137W (Tc)

Base Product Number

IPB80P

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

35 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

137 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.139332 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPB80P03P4-05 SP002325732

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

100 nC

Rds On - Drain-Source Resistance

4.1 mOhms

RoHS

Details

Typical Turn-Off Delay Time

70 ns

Id - Continuous Drain Current

80 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

4.7mOhm @ 80A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 253μA

输入电容(Ciss)(Max)@Vds

10300 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

130 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET