Infineon Technologies IPB80P04P4L06ATMA2

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3-2

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

88W (Tc)

Base Product Number

IPB80P

Continuous Drain Current Id

80

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

17 ns

Vgs th - Gate-Source Threshold Voltage

1.7 V

Pd - Power Dissipation

88 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 16 V, + 5 V

Unit Weight

0.011425 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPB80P04P4L-06 SP002325754

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

80 nC

Rds On - Drain-Source Resistance

8.2 mOhms

RoHS

Details

Typical Turn-Off Delay Time

61 ns

Id - Continuous Drain Current

80 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

88

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

6.7mOhm @ 80A, 10V

不同 Id 时 Vgs(th)（最大值）

2.2V @ 150μA

输入电容(Ciss)(Max)@Vds

6580 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

104 nC @ 10 V

上升时间

12 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

+5V, -16V

产品类别

MOSFET

信道型

P

场效应管特性

-

产品类别

MOSFET