Infineon Technologies IPB95R450PFD7ATMA1

包装/外壳

D2PAK-3

安装类型

表面贴装

供应商器件包装

PG-TO263-3-2

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

950 V

Id - Continuous Drain Current

13.3 A

Rds On - Drain-Source Resistance

450 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Qg - Gate Charge

43 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

104 W

Channel Mode

Enhancement

Fall Time

4.7 ns

Factory Pack QuantityFactory Pack Quantity

1000

Typical Turn-Off Delay Time

45 ns

Typical Turn-On Delay Time

9 ns

Part # Aliases

IPB95R450PFD7 SP005547014

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

13.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Infineon Technologies

Power Dissipation (Max)

104W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 360µA

操作温度

-55°C ~ 150°C (TJ)

系列

CoolMOS™

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

450mOhm @ 7.2A, 10V

输入电容(Ciss)(Max)@Vds

1230 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

43 nC @ 10 V

上升时间

8.7 ns

漏源电压 (Vdss)

950 V

Vgs（最大值）

±20V

场效应管特性

-