Infineon Technologies IPBE65R115CFD7AATMA1

安装类型

表面贴装

包装/外壳

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

供应商器件包装

PG-TO263-7-11

厂商

Infineon Technologies

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

114W (Tc)

Base Product Number

IPBE65R

Qualification

AEC-Q101

Continuous Drain Current Id

21A

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

17 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

114 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPBE65R115CFD7A SP002561838

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

41 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

115 mOhms

Typical Turn-Off Delay Time

61 ns

Id - Continuous Drain Current

21 A

操作温度

-40°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

114W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

115mOhm @ 9.7A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 490μA

输入电容(Ciss)(Max)@Vds

1950 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

41 nC @ 10 V

上升时间

3 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET