Infineon Technologies IPD036N04LGATMA1

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

安装类型

表面贴装

供应商器件包装

PG-TO252-3-11

Base Product Number

IPD036

Power Dissipation (Max)

94W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 45μA

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

90A (Tc)

Product Status

活跃

厂商

Infineon Technologies

Continuous Drain Current Id

90

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

9.3 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

94 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Forward Transconductance - Min

85 S

Channel Mode

Enhancement

Part # Aliases

IPD036N04L G SP001128832

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

59 nC

Rds On - Drain-Source Resistance

3.9 mOhms

RoHS

Details

Typical Turn-Off Delay Time

37 ns

Id - Continuous Drain Current

90 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

94

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.6mOhm @ 90A, 10V

输入电容(Ciss)(Max)@Vds

6300 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

78 nC @ 10 V

上升时间

5.4 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET