Infineon Technologies IPD047N03LF2SATMA1

包装/外壳

TO-252-3

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - Continuous Drain Current

71 A

Rds On - Drain-Source Resistance

4.7 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.35 V

Qg - Gate Charge

10 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

65 W

Channel Mode

Enhancement

Fall Time

6.4 ns

Forward Transconductance - Min

45 S

Typical Turn-Off Delay Time

10 ns

Typical Turn-On Delay Time

11 ns

配置

Single

通道数量

1 Channel

上升时间

10 ns

晶体管类型

1 N-Channel