Infineon Technologies IPD048N06L3GATMA1

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

安装类型

表面贴装

供应商器件包装

PG-TO252-3-311

Base Product Number

IPD048N

Power Dissipation (Max)

115W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.2V @ 58μA

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

90A (Tc)

Product Status

活跃

厂商

Infineon Technologies

RoHS

Details

Brand

Infineon Technologies

Manufacturer

Infineon

Part # Aliases

IPD048N06L3 G SP005559924

Factory Pack QuantityFactory Pack Quantity

2500

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

115 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

37 nC

Rds On - Drain-Source Resistance

4.8 mOhms

Id - Continuous Drain Current

90 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

系列

XPD048N06

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.8mOhm @ 90A, 10V

输入电容(Ciss)(Max)@Vds

8400 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

50 nC @ 4.5 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET