Infineon Technologies IPD50P04P413ATMA2

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

PG-TO252-3-313

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

58W (Tc)

Base Product Number

IPD50P04

Continuous Drain Current Id

50

Number of Elements per Chip

1

Package Type

DPAK (TO-252)

Channel Mode

Enhancement

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

17 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

58 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011425 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Part # Aliases

IPD50P04P4-13 SP002319830

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

39 nC

Rds On - Drain-Source Resistance

9.2 mOhms

RoHS

Details

Typical Turn-Off Delay Time

22 ns

Id - Continuous Drain Current

50 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

58

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

12.6mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 85μA

输入电容(Ciss)(Max)@Vds

3670 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

51 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

信道型

P

场效应管特性

-

产品类别

MOSFET