Infineon Technologies IPD60R1K0PFD7SAUMA1

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

PG-TO252-3

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

4.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

26W (Tc)

Base Product Number

IPD60R

Continuous Drain Current Id

4.7

Qualification

-

Vds - Drain-Source Breakdown Voltage

600 V

Moisture Sensitive

有

Typical Turn-On Delay Time

7.7 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

26 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.012699 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPD60R1K0PFD7S SP005353999

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

6 nC

Rds On - Drain-Source Resistance

1.978 Ohms

Typical Turn-Off Delay Time

42 ns

Id - Continuous Drain Current

4.7 A

操作温度

-40°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

26

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1Ohm @ 1A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 50μA

输入电容(Ciss)(Max)@Vds

230 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

6 nC @ 10 V

上升时间

9 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET