Infineon Technologies IPD65R600E6TR
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IPD65R600E6TR
1211-IPD65R600E6TR
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
IPD65R600E6TR详情
Infineon Technologies IPD65R600E6TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
PG-TO252-3-313
厂商
Infineon Technologies
Package
Bulk
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
63W (Tc)
操作温度
-55°C ~ 150°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
600mOhm @ 2.1A, 10V
不同 Id 时 Vgs(th)(最大值)
3.5V @ 210μA
输入电容(Ciss)(Max)@Vds
440 pF @ 100 V
门极电荷(Qg)(最大)@Vgs
23 nC @ 10 V
漏源电压 (Vdss)
650 V
Vgs(最大值)
±20V
场效应管特性
-
IPD65R600E6TR拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
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