Infineon Technologies IPD90R1K2C3ATMA2

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

PG-TO252-3

厂商

Infineon Technologies

Package

Tape & Reel (TR)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

5.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

83W (Tc)

Base Product Number

IPD90

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

5.1A

Id - Continuous Drain Current

5.1 A

RoHS

Details

Rds On - Drain-Source Resistance

1.2 Ohms

Qg - Gate Charge

28 nC

Brand

Infineon Technologies

Manufacturer

Infineon

Part # Aliases

IPD90R1K2C3 SP002548874

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

2500

Minimum Operating Temperature

- 55 C

Unit Weight

0.011640 oz

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

83 W

Vgs th - Gate-Source Threshold Voltage

3 V

Vds - Drain-Source Breakdown Voltage

900 V

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

83W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.2Ohm @ 2.8A, 10V

不同 Id 时 Vgs(th)（最大值）

3.5V @ 0.31mA

输入电容(Ciss)(Max)@Vds

710 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

3.2 nC @ 10 V

漏源电压 (Vdss)

900 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET