Infineon Technologies IPDD60R090CFD7XTMA1

安装类型

表面贴装

包装/外壳

10-PowerSOP Module

供应商器件包装

PG-HDSOP-10-1

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

33A (Tc)

Power Dissipation (Max)

227W (Tc)

Base Product Number

IPDD60

Qualification

-

Continuous Drain Current Id

33A

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

227 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

42 nC

Rds On - Drain-Source Resistance

90 mOhms

Id - Continuous Drain Current

33 A

操作温度

-55°C ~ 150°C (TJ)

通道数量

1 Channel

功率耗散

227W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

90mOhm @ 9.3A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 470μA

输入电容(Ciss)(Max)@Vds

1747 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

42 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

信道型

N通道

场效应管特性

-