Infineon Technologies IPDQ60R010S7AXTMA1

安装类型

表面贴装

包装/外壳

22-PowerBSOP Module

引脚数

22

供应商器件包装

PG-HDSOP-22-1

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 3.08mA

Power Dissipation (Max)

694W (Tc)

厂商

Infineon Technologies

Base Product Number

IPD60QR

Number of Elements per Chip

1

Package Type

QDPAK

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Continuous Drain Current Id

50A

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

694 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

750

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPDQ60R010S7A SP002063384

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

318 nC

Rds On - Drain-Source Resistance

10 mOhms

RoHS

Details

Id - Continuous Drain Current

50 A

操作温度

-40°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

694W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

10mOhm @ 50A, 12V

输入电容(Ciss)(Max)@Vds

11987 pF @ 300 V

门极电荷(Qg)(最大)@Vgs

318 nC @ 12 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET