Infineon Technologies IPDQ60R022S7XTMA1

包装/外壳

HDSOP-22

厂商

Infineon Technologies

Product Status

活跃

Base Product Number

IPD60QR

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

416 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

150 nC

Rds On - Drain-Source Resistance

22 mOhms

Id - Continuous Drain Current

24 A

系列

*

技术

Si

通道数量

1 Channel