Infineon Technologies IPDQ60R065S7XTMA1

安装类型

表面贴装

包装/外壳

22-PowerBSOP Module

供应商器件包装

PG-HDSOP-22-1

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 490μA

Power Dissipation (Max)

195W (Tc)

Factory Pack QuantityFactory Pack Quantity

750

Part # Aliases

IPDQ60R065S7 SP005559296

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

195 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

51 nC

Rds On - Drain-Source Resistance

65 mOhms

Id - Continuous Drain Current

9 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

65mOhm @ 8A, 12V

输入电容(Ciss)(Max)@Vds

1932 pF @ 300 V

门极电荷(Qg)(最大)@Vgs

51 nC @ 12 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET