注:图像仅供参考,请参阅产品规格
技术文档

价格梯度
内地含税价
1
¥36.704804
10
¥34.627174
100
¥32.667145
500
¥30.81806
1000
¥29.073643
Infineon Technologies IPF016N10NF2SATMA1
- 收藏
- 对比
IPF016N10NF2SATMA1
1211-IPF016N10NF2SATMA1
晶体管 - FET,MOSFET - 单个
TO-263-7
大陆
立即发货

TRENCH >=100V
--最小包装量--
¥
总价: ¥
IPF016N10NF2SATMA1详情
Infineon Technologies IPF016N10NF2SATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-7
厂商
Infineon Technologies
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
100 V
Vgs th - Gate-Source Threshold Voltage
2.2 V
Pd - Power Dissipation
300 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
161 nC
Rds On - Drain-Source Resistance
1.6 mOhms
Id - Continuous Drain Current
274 A
系列
*
通道数量
1 Channel
IPF016N10NF2SATMA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies






哦! 它是空的。