Infineon Technologies IPF023N08NF2SATMA1

包装/外壳

TO-263-7

厂商

Infineon Technologies

Product Status

活跃

Base Product Number

IPF023N

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

214 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

89 nC

Rds On - Drain-Source Resistance

2.3 mOhms

Id - Continuous Drain Current

209 A

系列

*

技术

Si

通道数量

1 Channel