Infineon Technologies IPI024N06N3GHKSA1
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IPI024N06N3GHKSA1
1211-IPI024N06N3GHKSA1
晶体管 - FET,MOSFET - 单个
TO-262-3 Long Leads, I2Pak, TO-262AA
大陆
立即发货

MOSFET N-CH 60V 120A TO262-3
1最小包装量--
IPI024N06N3GHKSA1详情
Infineon Technologies IPI024N06N3GHKSA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-262-3 Long Leads, I2Pak, TO-262AA
供应商器件包装
PG-TO262-3
Current - Continuous Drain (Id) @ 25℃
120A Tc
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
250W Tc
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 196μA
操作温度
-55°C~175°C TJ
包装
Tube
系列
OptiMOS™
已出版
2008
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.4mOhm @ 100A, 10V
输入电容(Ciss)(Max)@Vds
23000pF @ 30V
门极电荷(Qg)(最大)@Vgs
275nC @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±20V
IPI024N06N3GHKSA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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