Infineon Technologies IPL65R200CFD7AUMA1

安装类型

表面贴装

包装/外壳

4-PowerTSFN

供应商器件包装

PG-VSON-4

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

81W (Tc)

Number of Elements per Chip

1

Package Type

ThinPAK 8 x 8

MSL

MSL 2A - 4 weeks

Qualification

-

Continuous Drain Current Id

14A

Vds - Drain-Source Breakdown Voltage

650 V

Moisture Sensitive

有

Typical Turn-On Delay Time

70 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

81 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPL65R200CFD7 SP005559257

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

23 nC

Rds On - Drain-Source Resistance

200 mOhms

RoHS

Details

Typical Turn-Off Delay Time

14 ns

Id - Continuous Drain Current

14 A

操作温度

-40°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

5

配置

Single

通道数量

1 Channel

功率耗散

81W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

200mOhm @ 5.2A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 260μA

输入电容(Ciss)(Max)@Vds

1044 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

23 nC @ 10 V

上升时间

6.5 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET