Infineon Technologies IPN60R600PFD7SATMA1

安装类型

表面贴装

包装/外壳

TO-261-4, TO-261AA

引脚数

3

供应商器件包装

PG-SOT223-4

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 80μA

Power Dissipation (Max)

7W (Tc)

Base Product Number

IPN60R

Continuous Drain Current Id

6

Number of Elements per Chip

1

Package Type

SOT-223

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

7 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.004092 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPN60R600PFD7S SP005353997

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

8.5 nC

Rds On - Drain-Source Resistance

600 mOhms

Id - Continuous Drain Current

6 A

操作温度

-40°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

7

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

600mOhm @ 1.7A, 10V

输入电容(Ciss)(Max)@Vds

344 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

8.5 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET