Infineon Technologies IPN70R360P7SAUMA1
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IPN70R360P7SAUMA1
1211-IPN70R360P7SAUMA1
晶体管 - FET,MOSFET - 单个
SOT-223-3
大陆
立即发货

MOSFET
1最小包装量--
IPN70R360P7SAUMA1详情
Infineon Technologies IPN70R360P7SAUMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-223-3
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
700 V
Id - Continuous Drain Current
12.5 A
Rds On - Drain-Source Resistance
360 mOhms
Vgs - Gate-Source Voltage
- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage
3.5 V
Qg - Gate Charge
16.4 nC
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
7.2 W
Channel Mode
Enhancement
Fall Time
18 ns
Factory Pack QuantityFactory Pack Quantity
5000
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
19 ns
Unit Weight
0.004092 oz
包装
切割胶带
配置
Single
通道数量
1 Channel
上升时间
8 ns
晶体管类型
1 N-Channel
IPN70R360P7SAUMA1拓展信息
Infineon Technologies
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哦! 它是空的。