Infineon Technologies IPP011N04NF2SAKMA1

包装/外壳

PG-TO220-3

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

27 ns

Vgs th - Gate-Source Threshold Voltage

3.4 V

Pd - Power Dissipation

375 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPP011N04NF2S SP005561927

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

210 nC

Rds On - Drain-Source Resistance

1.15 mOhms

Typical Turn-Off Delay Time

90 ns

Id - Continuous Drain Current

201 A

系列

*

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

51 ns

产品类别

MOSFET

产品类别

MOSFET