Infineon Technologies IPP014N06NF2SAKMA1

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

PG-TO220-3-U05

厂商

Infineon Technologies

Package

Tape & Reel (TR)

Product Status

Discontinued at Digi-Key

Current - Continuous Drain (Id) @ 25℃

39A (Ta), 198A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

3.8W (Ta), 300W (Tc)

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

22 ns

Vgs th - Gate-Source Threshold Voltage

3.3 V

Pd - Power Dissipation

214 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

120 S

Channel Mode

Enhancement

Part # Aliases

IPP014N06NF2S SP005588928

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

106 nC

Rds On - Drain-Source Resistance

1.4 mOhms

Typical Turn-Off Delay Time

47 ns

Id - Continuous Drain Current

180 A

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.4mOhm @ 100A, 10V

不同 Id 时 Vgs(th)（最大值）

3.3V @ 246μA

输入电容(Ciss)(Max)@Vds

13800 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

305 nC @ 10 V

上升时间

18 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET