Infineon Technologies IPP019N08NF2SAKMA1

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

PG-TO220-3

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

32A (Ta), 191A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

3.8W (Ta), 250W (Tc)

Base Product Number

IPP019N

Continuous Drain Current Id

191

Number of Elements per Chip

1

Package Type

TO-220

Qualification

-

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

250 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Id - Continuous Drain Current

191 A

Rds On - Drain-Source Resistance

1.9 mOhms

Qg - Gate Charge

124 nC

Brand

Infineon Technologies

Manufacturer

Infineon

Part # Aliases

IPP019N08NF2S SP005548842

Channel Mode

Enhancement

Mounting Styles

通孔

Factory Pack QuantityFactory Pack Quantity

1000

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

250

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.9mOhm @ 100A, 10V

不同 Id 时 Vgs(th)（最大值）

3.8V @ 194μA

输入电容(Ciss)(Max)@Vds

8700 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

186 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET