Infineon Technologies IPP029N06NAK5A1
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IPP029N06NAK5A1
1211-IPP029N06NAK5A1
晶体管 - FET,MOSFET - 单个
TO-220-3
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
IPP029N06NAK5A1详情
Infineon Technologies IPP029N06NAK5A1重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-220-3
供应商器件包装
PG-TO220-3
厂商
Infineon Technologies
Package
Bulk
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.8V @ 75μA
Power Dissipation (Max)
3W (Ta), 136W (Tc)
操作温度
-55°C ~ 175°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
2.9mOhm @ 100A, 10V
输入电容(Ciss)(Max)@Vds
4100 pF @ 30 V
门极电荷(Qg)(最大)@Vgs
56 nC @ 10 V
漏源电压 (Vdss)
60 V
Vgs(最大值)
±20V
场效应管特性
-
IPP029N06NAK5A1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







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