Infineon Technologies IPP040N06NF2SAKMA1

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

PG-TO220-3

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

3W (Ta), 107W (Tc)

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

19 ns

Vgs th - Gate-Source Threshold Voltage

3.3 V

Pd - Power Dissipation

107 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Forward Transconductance - Min

60 S

Channel Mode

Enhancement

Part # Aliases

IPP040N06NF2S SP005550852

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

38 nC

Rds On - Drain-Source Resistance

4 mOhms

Typical Turn-Off Delay Time

30 ns

Id - Continuous Drain Current

80 A

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4mOhm @ 80A, 10V

不同 Id 时 Vgs(th)（最大值）

3.3V @ 50μA

输入电容(Ciss)(Max)@Vds

3375 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

44 nC @ 10 V

上升时间

16 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET