Infineon Technologies IPP055N08NF2SAKMA1

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

PG-TO220-3

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

18.5A (Ta), 99A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

3.8W (Ta), 107W (Tc)

Base Product Number

IPP055M

Continuous Drain Current Id

99

Number of Elements per Chip

1

Package Type

TO-220

Qualification

-

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

107 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPP055N08NF2S SP005548846

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

36 nC

Rds On - Drain-Source Resistance

5.5 mOhms

Id - Continuous Drain Current

99 A

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

107

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

5.5mOhm @ 60A, 10V

不同 Id 时 Vgs(th)（最大值）

3.8V @ 55μA

输入电容(Ciss)(Max)@Vds

2500 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

54 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET