Infineon Technologies IPP110N20NAXK

包装/外壳

TO-220-3

引脚数

3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

200 V

Id - Continuous Drain Current

88 A

Rds On - Drain-Source Resistance

9.9 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

87 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

300 W

Channel Mode

Enhancement

Tradename

OptiMOS

Fall Time

11 ns

Factory Pack QuantityFactory Pack Quantity

500

Typical Turn-Off Delay Time

41 ns

Typical Turn-On Delay Time

18 ns

Part # Aliases

SP000877672 IPP110N20NAAKSA1

Unit Weight

0.068784 oz

Turn Off Delay Time

41 ns

系列

OptiMOS 3

包装

Tube

最高工作温度

175 °C

最小工作温度

-55 °C

配置

Single

通道数量

1 Channel

元素配置

Single

功率耗散

300 W

上升时间

26 ns

晶体管类型

1 N-Channel

连续放电电流(ID)

88 A

栅极至源极电压(Vgs)

20 V

漏源击穿电压

200 V

漏源电阻

10.7 mΩ

高度

15.65 mm

长度

10 mm

宽度

4.4 mm