Infineon Technologies IPP60R040S7XKSA1

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

PG-TO220-3

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 790μA

Power Dissipation (Max)

245W (Tc)

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

245 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPP60R040S7 SP005559297

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

83 nC

Rds On - Drain-Source Resistance

40 mOhms

RoHS

Details

Id - Continuous Drain Current

13 A

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

40mOhm @ 13A, 12V

输入电容(Ciss)(Max)@Vds

3127 pF @ 300 V

门极电荷(Qg)(最大)@Vgs

83 nC @ 12 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品

MOSFET

产品类别

MOSFET