Infineon Technologies IPP60R065S7XKSA1

包装/外壳

TO220-3

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Base Product Number

IPP60R

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

167 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

51 nC

Rds On - Drain-Source Resistance

65 mOhms

Id - Continuous Drain Current

8 A

系列

*

技术

Si

通道数量

1 Channel