Infineon Technologies IPP65R115CFD7AAKSA1

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

PG-TO220-3

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

114W (Tc)

Base Product Number

IPP65R115

Continuous Drain Current Id

21

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Qualification

AEC-Q101

Pd - Power Dissipation

114 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.181626 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPP65R115CFD7A SP003793168

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

41 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

115 mOhms

RoHS

Details

Id - Continuous Drain Current

21 A

操作温度

-40°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

功率耗散

114

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

115mOhm @ 9.7A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 490μA

输入电容(Ciss)(Max)@Vds

1950 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

41 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET