Infineon Technologies IPT010N08NM5ATMA1

安装类型

表面贴装

包装/外壳

8-PowerSFN

引脚数

8

供应商器件包装

PG-HSOF-8

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

43A (Ta), 425A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.8V @ 280μA

Power Dissipation (Max)

3.8W (Ta), 375W (Tc)

Base Product Number

IPT010N

Continuous Drain Current Id

425

Number of Elements per Chip

1

Package Type

HSOF-8

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

80 V

Typical Turn-On Delay Time

35 ns

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

375 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.027197 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

120 S

Channel Mode

Enhancement

Part # Aliases

IPT010N08NM5 SP005560711

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

178 nC

Rds On - Drain-Source Resistance

1.05 mOhms

Typical Turn-Off Delay Time

82 ns

Id - Continuous Drain Current

425 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

375

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.05mOhm @ 150A, 10V

输入电容(Ciss)(Max)@Vds

16000 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

223 nC @ 10 V

上升时间

31 ns

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET