Infineon Technologies IPT063N15N5ATMA1

安装类型

表面贴装

包装/外壳

8-PowerSFN

供应商器件包装

PG-HSOF-8

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

16.2A (Ta), 122A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Power Dissipation (Max)

3.8W (Ta), 214W (Tc)

Base Product Number

IPT063N

Number of Elements per Chip

1

Package Type

HSOF-8

MSL

-

Qualification

-

Continuous Drain Current Id

122A

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

4.6 V

Pd - Power Dissipation

214 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPT063N15N5 SP005537534

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

47 nC

Rds On - Drain-Source Resistance

6.3 mOhms

RoHS

Details

Id - Continuous Drain Current

122 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

214W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6.3mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

4.6V @ 153μA

输入电容(Ciss)(Max)@Vds

4550 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

59 nC @ 10 V

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品

MOSFET

产品类别

MOSFET