Infineon Technologies IPT60R125CFD7XTMA1

安装类型

表面贴装

包装/外壳

8-PowerSFN

供应商器件包装

PG-HSOF-8-1

厂商

Infineon Technologies

Package

Bulk

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

127W (Tc)

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

127 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.027197 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPT60R125CFD7 SP005346348

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

8 nC

Rds On - Drain-Source Resistance

125 mOhms

RoHS

Details

Id - Continuous Drain Current

21 A

Base Product Number

IPT60R125

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

125mOhm @ 6.8A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 340μA

输入电容(Ciss)(Max)@Vds

1330 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

31 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET