Infineon Technologies IPTG018N08NM5ATMA1
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IPTG018N08NM5ATMA1
1211-IPTG018N08NM5ATMA1
晶体管 - FET,MOSFET - 单个
8-PowerSFN
大陆
立即发货

TRENCH 40<-<100V PG-HSOG-8
1最小包装量--
IPTG018N08NM5ATMA1详情
Infineon Technologies IPTG018N08NM5ATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerSFN
供应商器件包装
PG-HSOG-8-1
厂商
Infineon Technologies
Package
Tape & Reel (TR)
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
32A (Ta), 253A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.8V @ 159μA
Power Dissipation (Max)
3.8W (Ta), 231W (Tc)
Base Product Number
IPTG018N
Continuous Drain Current Id
253
Factory Pack QuantityFactory Pack Quantity
1800
Part # Aliases
IPTG018N08NM5 SP005575190
Manufacturer
Infineon
Brand
Infineon Technologies
RoHS
Details
操作温度
-55°C ~ 175°C (TJ)
包装
Reel
子类别
MOSFETs
功率耗散
231
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
1.8mOhm @ 150A, 10V
输入电容(Ciss)(Max)@Vds
9200 pF @ 40 V
门极电荷(Qg)(最大)@Vgs
127 nC @ 10 V
漏源电压 (Vdss)
80 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
IPTG018N08NM5ATMA1拓展信息
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